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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() 2SK354700L $0.36 | Panasonic Electronic Components | MOSFET N-CH 50V 100MA SSSMINI3 | Tape & Reel (TR),Cut Tape (CT) | SSSMini3-F1 | Surface Mount | - | 125°C (TJ) |
![]() 2SK3547G0L $0.11 | Panasonic Electronic Components | MOSFET N-CH 50V 100MA SSSMINI3 | Tape & Reel (TR) | SSSMini3-F2 | Surface Mount | - | 125°C (TJ) |
![]() 2SK3564(STA4,Q,M) $1.79 | Toshiba Semiconductor and Storage | MOSFET N-CH 900V 3A TO220SIS | Tube | TO-220SIS | Through Hole | π-MOSIV | 150°C (TJ) |
| Toshiba Semiconductor and Storage | MOSFET N-CH 900V 5A TO220SIS | Bulk | TO-220SIS | Through Hole | π-MOSIV | 150°C (TJ) | |
![]() 2SK3566(STA4,Q,M) $1.82 | Toshiba Semiconductor and Storage | MOSFET N-CH 900V 2.5A TO220SIS | Tube | TO-220SIS | Through Hole | π-MOSIV | 150°C (TJ) |
![]() 2SK3570-ZK-E1-AZ $1.02 | Renesas Electronics Corporation | POWER FIELD-EFFECT TRANSISTOR | Bulk | - | - | * | - |
![]() 2SK3573-AZ $1.97 | Renesas Electronics Corporation | N-CHANNEL POWER MOSFET | Bulk | - | - | * | - |
![]() 2SK3573-ZK-E1-AZ $1.97 | Renesas Electronics Corporation | N-CHANNEL POWER MOSFET | Bulk | - | - | * | - |

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