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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Microchip TechnologyIGBT TRENCH FIELD STOP 600V 283ATube-Through Hole--55°C ~ 175°C (TJ)
Microchip TechnologyIGBT MOD 600V 283A 682W ISOTOPTubeISOTOP®Chassis Mount--55°C ~ 175°C (TJ)
Microchip TechnologyIGBT MOD 600V 283A 682W ISOTOPTubeISOTOP®Chassis Mount--55°C ~ 175°C (TJ)
Microchip TechnologyIGBT MOD 600V 195A 500W SOT227TraySOT-227Chassis MountThunderbolt IGBT®-55°C ~ 150°C (TJ)
Microchip TechnologyIGBT NPT 1200V 32A TO-247-3TubeTO-247-3Through Hole--55°C ~ 150°C (TJ)
Microsemi CorporationIGBT NPT 1200V 32A TO247TubeTO-247 [B]Through Hole--55°C ~ 150°C (TJ)
Microchip TechnologyIGBT TRENCH FS 600V 40A TO247TubeTO-247 [B]Through Hole--55°C ~ 175°C (TJ)
Microchip TechnologyIGBT TRENCH FS 600V 40A TO-247-3TubeTO-247-3Through Hole--55°C ~ 175°C (TJ)
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