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IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() APT150GN60J $27.57 | Microchip Technology | IGBT MOD 600V 220A 536W ISOTOP | Tube | ISOTOP® | Chassis Mount | - | -55°C ~ 175°C (TJ) |
![]() APT150GN60JDQ4 $33.23 | Microchip Technology | IGBT MOD 600V 220A 536W ISOTOP | Tube | ISOTOP® | Chassis Mount | - | -55°C ~ 175°C (TJ) |
![]() APT150GN60LDQ4G $24.12 | Microchip Technology | IGBT TRENCH FS 600V 220A TO264 | Tube | TO-264 [L] | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() APT150GT120JR $53.81 | Microchip Technology | IGBT MOD 1200V 170A 830W ISOTOP | Tube | ISOTOP® | Chassis Mount | Thunderbolt IGBT® | -55°C ~ 150°C (TJ) |
![]() APT15GN120BDQ1G $5.85 | Microchip Technology | IGBT TRENCH FS 1200V 45A TO247 | Tube | TO-247 [B] | Through Hole | - | -55°C ~ 150°C (TJ) |
| Microsemi Corporation | IGBT PT 600V 56A TO-247 | Tube | TO-247 | Through Hole | - | -55°C ~ 150°C (TJ) | |
![]() APT15GP60BDQ1G $4.59 | Microchip Technology | IGBT PT 600V 56A TO247 | Tube | TO-247 [B] | Through Hole | POWER MOS 7® | -55°C ~ 150°C (TJ) |
![]() APT15GP60BG $3.26 | Microchip Technology | IGBT PT 600V 56A TO247 | Tube | TO-247 [B] | Through Hole | POWER MOS 7® | -55°C ~ 150°C (TJ) |
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