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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Microchip TechnologyIGBT MOD 600V 220A 536W ISOTOPTubeISOTOP®Chassis Mount--55°C ~ 175°C (TJ)
Microchip TechnologyIGBT MOD 600V 220A 536W ISOTOPTubeISOTOP®Chassis Mount--55°C ~ 175°C (TJ)
Microchip TechnologyIGBT TRENCH FS 600V 220A TO264TubeTO-264 [L]Through Hole--55°C ~ 175°C (TJ)
Microchip TechnologyIGBT MOD 1200V 170A 830W ISOTOPTubeISOTOP®Chassis MountThunderbolt IGBT®-55°C ~ 150°C (TJ)
Microchip TechnologyIGBT TRENCH FS 1200V 45A TO247TubeTO-247 [B]Through Hole--55°C ~ 150°C (TJ)
Microsemi CorporationIGBT PT 600V 56A TO-247TubeTO-247Through Hole--55°C ~ 150°C (TJ)
Microchip TechnologyIGBT PT 600V 56A TO247TubeTO-247 [B]Through HolePOWER MOS 7®-55°C ~ 150°C (TJ)
Microchip TechnologyIGBT PT 600V 56A TO247TubeTO-247 [B]Through HolePOWER MOS 7®-55°C ~ 150°C (TJ)
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