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IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() APT100GLQ65JU3 $21.00 | Microchip Technology | IGBT 600V 100A 430W ISOTOP | Tube | ISOTOP® | Chassis Mount | - | -55°C ~ 175°C |
![]() APT100GN120B2G $25.04 | Microchip Technology | IGBT TRENCH FIELD STP 1200V 245A | Tube | - | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() APT100GN120J $31.88 | Microchip Technology | IGBT MOD 1200V 153A 446W ISOTOP | Tube | ISOTOP® | Chassis Mount | - | -55°C ~ 150°C (TJ) |
![]() APT100GN120JDQ4 $47.29 | Microchip Technology | IGBT MOD 1200V 153A 446W ISOTOP | Tube | ISOTOP® | Chassis Mount | - | -55°C ~ 150°C (TJ) |
![]() APT100GN60B2G $8.12 | Microchip Technology | IGBT TRENCH FIELD STOP 600V 229A | Tube | - | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() APT100GN60LDQ4G $12.71 | Microchip Technology | IGBT TRENCH FS 600V 229A TO264 | Tube | TO-264 [L] | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() APT100GT120JR $43.88 | Microchip Technology | IGBT MOD 1200V 123A 570W ISOTOP | Tube | ISOTOP® | Chassis Mount | Thunderbolt IGBT® | -55°C ~ 150°C (TJ) |
![]() APT100GT120JRDQ4 $52.55 | Microchip Technology | IGBT MOD 1200V 123A 570W ISOTOP | Tube | ISOTOP® | Chassis Mount | Thunderbolt IGBT® | -55°C ~ 150°C (TJ) |
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