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IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() APT100GT120JU2 $28.49 | Microchip Technology | IGBT MOD 1200V 140A 480W SOT227 | Bulk | SOT-227 | Chassis Mount | - | -55°C ~ 150°C (TJ) |
![]() APT100GT120JU3 $28.49 | Microchip Technology | IGBT MOD 1200V 140A 480W SOT227 | Bulk | SOT-227 | Chassis Mount | - | -55°C ~ 150°C (TJ) |
| Microchip Technology | IGBT NPT 600V 148A | Tube | - | Through Hole | Thunderbolt IGBT® | -55°C ~ 150°C (TJ) | |
![]() APT100GT60JR $14.01 | Microchip Technology | IGBT MOD 600V 148A 500W ISOTOP | Tube | ISOTOP® | Chassis Mount | Thunderbolt IGBT® | -55°C ~ 150°C (TJ) |
![]() APT100GT60JRDQ4 $23.13 | Microchip Technology | IGBT MOD 600V 148A 500W ISOTOP | Tube | ISOTOP® | Chassis Mount | Thunderbolt IGBT® | -55°C ~ 150°C (TJ) |
![]() APT102GA60B2 $12.40 | Microchip Technology | IGBT 600V 183A 780W TO247 | Tube | - | Through Hole | POWER MOS 8™ | -55°C ~ 150°C (TJ) |
![]() APT102GA60L $11.28 | Microchip Technology | IGBT PT 600V 183A TO264 | Tube | TO-264 [L] | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() APT11GF120BRDQ1G $3.76 | Microsemi Corporation | IGBT NPT 1200V 25A TO247 | Tube | TO-247 [B] | Through Hole | - | -55°C ~ 150°C (TJ) |
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