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IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
| Microsemi Corporation | IGBT PT 600V 56A TO220 | Tube | TO-220 [K] | Through Hole | POWER MOS 7® | -55°C ~ 150°C (TJ) | |
![]() APT15GP90BDQ1G $5.15 | Microchip Technology | IGBT PT 900V 43A TO247 | Tube | TO-247 [B] | Through Hole | POWER MOS 7® | -55°C ~ 150°C (TJ) |
| Microsemi Corporation | IGBT PT 900V 43A TO247 | Tube | TO-247 [B] | Through Hole | POWER MOS 7® | - | |
![]() APT15GT120BRDQ1G $3.76 | Microchip Technology | IGBT NPT 1200V 36A TO247 | Tube | TO-247 [B] | Through Hole | Thunderbolt IGBT® | -55°C ~ 150°C (TJ) |
| Microchip Technology | IGBT NPT 1200V 36A TO247 | Tube | TO-247 [B] | Through Hole | Thunderbolt IGBT® | -55°C ~ 150°C (TJ) | |
| Microchip Technology | IGBT NPT 600V 42A TO247 | Tube | TO-247 [B] | Through Hole | Thunderbolt IGBT® | -55°C ~ 150°C (TJ) | |
| Microchip Technology | IGBT NPT 600V 42A TO247 | Tube | TO-247 [B] | Through Hole | Thunderbolt IGBT® | -55°C ~ 150°C (TJ) | |
![]() APT15GT60KRG $1.62 | Microsemi Corporation | IGBT NPT 600V 42A TO220 | Tube | TO-220 [K] | Through Hole | Thunderbolt IGBT® | -55°C ~ 150°C (TJ) |
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