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IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
| Microsemi Corporation | IGBT NPT 1200V 25A TO220 | Tube | TO-220 [K] | Through Hole | - | -55°C ~ 150°C (TJ) | |
![]() APT11GP60BDQBG $3.17 | Microsemi Corporation | IGBT PT 600V 41A TO-247-3 | Tube | TO-247-3 | Through Hole | POWER MOS 7® | -55°C ~ 150°C (TJ) |
![]() APT13GP120BDQ1G $5.92 | Microchip Technology | IGBT PT 1200V 41A TO247 | Tube | TO-247 [B] | Through Hole | POWER MOS 7® | -55°C ~ 150°C (TJ) |
![]() APT13GP120BG $5.24 | Microchip Technology | IGBT PT 1200V 41A TO247 | Tube | TO-247 [B] | Through Hole | POWER MOS 7® | -55°C ~ 150°C (TJ) |
| Microsemi Corporation | IGBT PT 1200V 41A TO220 | Tube | TO-220 [K] | Through Hole | POWER MOS 7® | -55°C ~ 150°C (TJ) | |
![]() APT150GN120J $40.34 | Microchip Technology | IGBT MOD 1200V 215A 625W ISOTOP | Tube | ISOTOP® | Chassis Mount | - | -55°C ~ 150°C (TJ) |
![]() APT150GN120JDQ4 $57.94 | Microchip Technology | IGBT MOD 1200V 215A 625W ISOTOP | Tube | ISOTOP® | Chassis Mount | - | -55°C ~ 150°C (TJ) |
![]() APT150GN60B2G $17.07 | Microchip Technology | IGBT TRENCH FIELD STOP 600V 220A | Tube | - | Through Hole | - | -55°C ~ 175°C (TJ) |
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