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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Microsemi CorporationIGBT NPT 1200V 75A TO-247TubeTO-247Through Hole--55°C ~ 150°C (TJ)
Microchip TechnologyIGBT NPT 1200V 75A D3PAKBulkD3PAKSurface Mount--55°C ~ 150°C (TJ)
Microchip TechnologyIGBT NPT 1200V 75A D3PAKTubeD3PAKSurface Mount--55°C ~ 150°C (TJ)
Microsemi CorporationIGBT NPT 1200V 75A D3PAKTubeD3PAKSurface Mount--55°C ~ 150°C (TJ)
Microchip TechnologyIGBT NPT 1200V 54A TO247TubeTO-247 [B]Through HoleThunderbolt IGBT®-55°C ~ 150°C (TJ)
Microchip TechnologyIGBT NPT 1200V 54A TO247TubeTO-247 [B]Through HoleThunderbolt IGBT®-55°C ~ 150°C (TJ)
Microchip TechnologyIGBT PT 900V 48A TO247TubeTO-247 [B]Through Hole--55°C ~ 150°C (TJ)
Microchip TechnologyIGBT MODULE 600V 58A 192W SOT227BulkSOT-227Chassis Mount--
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