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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Microchip TechnologyIGBT MODULE 600V 58A 192W ISOTOPBulkISOTOP®Chassis Mount--
Microchip TechnologyIGBT TRENCH FS 600V 63A TO247TubeTO-247 [B]Through Hole--55°C ~ 175°C (TJ)
Microchip TechnologyIGBT TRENCH FS 600V 63A TO247TubeTO-247 [B]Through Hole--55°C ~ 175°C (TJ)
Microsemi CorporationIGBT PT 600V 100A T-MAXTubeT-MAX™Through Hole--55°C ~ 150°C (TJ)
Microchip TechnologyIGBT PT 600V 100A TO247TubeTO-247 [B]Through HolePOWER MOS 7®-55°C ~ 150°C (TJ)
Microchip TechnologyIGBT PT 600V 100A TO247TubeTO-247 [B]Through HolePOWER MOS 7®-55°C ~ 150°C (TJ)
Microsemi CorporationIGBT MODULE 600V 67A 245W ISOTOPTubeISOTOP®Chassis MountPOWER MOS 7®-55°C ~ 150°C (TJ)
Microsemi CorporationIGBT PT 600V 100A TO-264TubeTO-264Through Hole--55°C ~ 150°C (TJ)
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