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IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() APT30GF60JU3 $11.66 | Microchip Technology | IGBT MODULE 600V 58A 192W ISOTOP | Bulk | ISOTOP® | Chassis Mount | - | - |
![]() APT30GN60BDQ2G $3.43 | Microchip Technology | IGBT TRENCH FS 600V 63A TO247 | Tube | TO-247 [B] | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() APT30GN60BG $2.60 | Microchip Technology | IGBT TRENCH FS 600V 63A TO247 | Tube | TO-247 [B] | Through Hole | - | -55°C ~ 175°C (TJ) |
| Microsemi Corporation | IGBT PT 600V 100A T-MAX | Tube | T-MAX™ | Through Hole | - | -55°C ~ 150°C (TJ) | |
![]() APT30GP60BDQ1G $7.39 | Microchip Technology | IGBT PT 600V 100A TO247 | Tube | TO-247 [B] | Through Hole | POWER MOS 7® | -55°C ~ 150°C (TJ) |
![]() APT30GP60BG $6.76 | Microchip Technology | IGBT PT 600V 100A TO247 | Tube | TO-247 [B] | Through Hole | POWER MOS 7® | -55°C ~ 150°C (TJ) |
| Microsemi Corporation | IGBT MODULE 600V 67A 245W ISOTOP | Tube | ISOTOP® | Chassis Mount | POWER MOS 7® | -55°C ~ 150°C (TJ) | |
| Microsemi Corporation | IGBT PT 600V 100A TO-264 | Tube | TO-264 | Through Hole | - | -55°C ~ 150°C (TJ) |
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