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IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
| Microchip Technology | IGBT NPT 600V 54A TO247 | Tube | TO-247 [B] | Through Hole | Thunderbolt IGBT® | -55°C ~ 150°C (TJ) | |
![]() APT30GT60BRDQ2G $4.80 | Microchip Technology | IGBT NPT 600V 64A TO247 | Tube | TO-247 [B] | Through Hole | Thunderbolt IGBT® | -55°C ~ 150°C (TJ) |
| Microchip Technology | IGBT NPT 600V 64A TO247 | Tube | TO-247 [B] | Through Hole | Thunderbolt IGBT® | -55°C ~ 150°C (TJ) | |
![]() APT30GT60KRG $3.03 | Microsemi Corporation | IGBT NPT 600V 64A TO220 | Tube | TO-220 [K] | Through Hole | Thunderbolt IGBT® | -55°C ~ 150°C (TJ) |
![]() APT33GF120B2RDQ2G $15.46 | Microchip Technology | IGBT NPT 1200V 64A | Tube | - | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() APT33GF120BRG $7.83 | Microchip Technology | IGBT NPT 1200V 52A TO247 | Tube | TO-247 [B] | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() APT33GF120LRDQ2G $10.81 | Microchip Technology | IGBT NPT 1200V 64A TO264 | Tube | TO-264 [L] | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() APT35GA90B $3.33 | Microchip Technology | IGBT PT 900V 63A TO247 | Tube | TO-247 [B] | Through Hole | POWER MOS 8™ | -55°C ~ 150°C (TJ) |
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