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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Microchip TechnologyIGBT NPT 600V 54A TO247TubeTO-247 [B]Through HoleThunderbolt IGBT®-55°C ~ 150°C (TJ)
Microchip TechnologyIGBT NPT 600V 64A TO247TubeTO-247 [B]Through HoleThunderbolt IGBT®-55°C ~ 150°C (TJ)
Microchip TechnologyIGBT NPT 600V 64A TO247TubeTO-247 [B]Through HoleThunderbolt IGBT®-55°C ~ 150°C (TJ)
Microsemi CorporationIGBT NPT 600V 64A TO220TubeTO-220 [K]Through HoleThunderbolt IGBT®-55°C ~ 150°C (TJ)
Microchip TechnologyIGBT NPT 1200V 64ATube-Through Hole--55°C ~ 150°C (TJ)
Microchip TechnologyIGBT NPT 1200V 52A TO247TubeTO-247 [B]Through Hole--55°C ~ 150°C (TJ)
Microchip TechnologyIGBT NPT 1200V 64A TO264TubeTO-264 [L]Through Hole--55°C ~ 150°C (TJ)
Microchip TechnologyIGBT PT 900V 63A TO247TubeTO-247 [B]Through HolePOWER MOS 8™-55°C ~ 150°C (TJ)
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