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IXYH40N120C4View Product
IGBTs
IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
Screen Default Ranking Price By Date
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
 APT40GF120JRD $36.07 | Microchip Technology | IGBT NPT COMBI 1200V 40A ISOTOP | Tube | SOT-227 (ISOTOP®) | Chassis Mount | - | -55°C ~ 150°C (TJ) |
APT40GL120JU2 $18.02 | Microchip Technology | IGBT MOD 1200V 65A 220W SOT227 | Bulk | SOT-227 | Chassis, Stud Mount | - | -55°C ~ 175°C (TJ) |
APT40GL120JU3 $18.02 | Microchip Technology | IGBT MOD 1200V 65A 220W SOT227 | Bulk | SOT-227 | Chassis, Stud Mount | - | -55°C ~ 175°C (TJ) |
APT40GLQ120JCU2 $27.93 | Microchip Technology | IGBT MOD 1200V 80A 312W SOT227 | Bulk | SOT-227 | Chassis, Stud Mount | - | -55°C ~ 150°C (TJ) |
 APT40GP60B2DQ2G $11.14 | Microchip Technology | IGBT PT 600V 100A | Tube | - | Through Hole | POWER MOS 7® | -55°C ~ 150°C (TJ) |
 APT40GP60BG $11.14 | Microchip Technology | IGBT PT 600V 100A TO247 | Tube | TO-247 [B] | Through Hole | POWER MOS 7® | -55°C ~ 150°C (TJ) |
APT40GP60J $25.56 | Microchip Technology | IGBT 600V 86A 284W SOT227 | Tube | ISOTOP® | Chassis Mount | POWER MOS 7® | - |
APT40GP60JDQ2 $33.92 | Microchip Technology | IGBT MODULE 600V 86A 284W ISOTOP | Tube | ISOTOP® | Chassis Mount | POWER MOS 7® | -55°C ~ 150°C (TJ) |
