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IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
| Microsemi Corporation | IGBT PT 600V 100A D3PAK | Tube | D3PAK | Surface Mount | POWER MOS 7® | -55°C ~ 150°C (TJ) | |
![]() APT40GP90B2DQ2G $16.04 | Microchip Technology | IGBT PT 900V 101A | Tube | - | Through Hole | POWER MOS 7® | -55°C ~ 150°C (TJ) |
![]() APT40GP90BG $13.50 | Microchip Technology | IGBT PT 900V 100A TO247 | Tube | TO-247 [B] | Through Hole | POWER MOS 7® | -55°C ~ 150°C (TJ) |
![]() APT40GP90J $33.50 | Microchip Technology | IGBT MODULE 900V 68A 284W ISOTOP | Tube | ISOTOP® | Chassis Mount | POWER MOS 7® | -55°C ~ 150°C (TJ) |
![]() APT40GP90JDQ2 $34.06 | Microchip Technology | IGBT MODULE 900V 64A 284W ISOTOP | Tube | ISOTOP® | Chassis Mount | POWER MOS 7® | -55°C ~ 150°C (TJ) |
![]() APT40GR120B $5.74 | Microchip Technology | IGBT NPT 1200V 88A TO-247-3 | Tube | TO-247-3 | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() APT40GR120B2D30 $7.51 | Microchip Technology | IGBT NPT 1200V 88A TO-247-3 | Tube | TO-247-3 | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() APT40GR120B2SCD10 $10.75 | Microsemi Corporation | IGBT NPT 1200V 88A TO-247 | Tube | TO-247 | Through Hole | - | -55°C ~ 150°C (TJ) |
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