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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Microchip TechnologyIGBT PT MOS 8 COMBI 900 V 46 A STube----
Microchip TechnologyIGBT 600V 87A 283W SOT-227TubeISOTOP®Chassis MountPOWER MOS 8™-55°C ~ 150°C (TJ)
Microchip TechnologyIGBT NPT 1200V 135ATube-Through Hole--55°C ~ 150°C (TJ)
Microchip TechnologyIGBT NPT COMBI 1200V 50A ISOTOPTubeSOT-227 (ISOTOP®)Chassis Mount--55°C ~ 150°C (TJ)
Microchip TechnologyIGBT MOD 1200V 120A 521W ISOTOPTubeISOTOP®Chassis Mount--55°C ~ 150°C (TJ)
Microchip TechnologyIGBT NPT 1200V 135A TO264TubeTO-264 [L]Through Hole--55°C ~ 150°C (TJ)
Microsemi CorporationIGBT MODULE 600V 70A 277W SOT227BulkSOT-227Chassis, Stud Mount--55°C ~ 150°C (TJ)
Microchip TechnologyIGBT MODULE 600V 75A 277W SOT227BulkSOT-227Chassis Mount--
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