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IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
| Microchip Technology | IGBT PT MOS 8 COMBI 900 V 46 A S | Tube | - | - | - | - | |
![]() APT47GA60JD40 $24.71 | Microchip Technology | IGBT 600V 87A 283W SOT-227 | Tube | ISOTOP® | Chassis Mount | POWER MOS 8™ | -55°C ~ 150°C (TJ) |
![]() APT50GF120B2RG $18.08 | Microchip Technology | IGBT NPT 1200V 135A | Tube | - | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() APT50GF120JRD $41.50 | Microchip Technology | IGBT NPT COMBI 1200V 50A ISOTOP | Tube | SOT-227 (ISOTOP®) | Chassis Mount | - | -55°C ~ 150°C (TJ) |
![]() APT50GF120JRDQ3 $73.56 | Microchip Technology | IGBT MOD 1200V 120A 521W ISOTOP | Tube | ISOTOP® | Chassis Mount | - | -55°C ~ 150°C (TJ) |
![]() APT50GF120LRG $18.45 | Microchip Technology | IGBT NPT 1200V 135A TO264 | Tube | TO-264 [L] | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() APT50GF60JCU2 $17.83 | Microsemi Corporation | IGBT MODULE 600V 70A 277W SOT227 | Bulk | SOT-227 | Chassis, Stud Mount | - | -55°C ~ 150°C (TJ) |
![]() APT50GF60JU2 $26.96 | Microchip Technology | IGBT MODULE 600V 75A 277W SOT227 | Bulk | SOT-227 | Chassis Mount | - | - |
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