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IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() APT50GP60J $27.31 | Microchip Technology | IGBT MOD 600V 100A 329W ISOTOP | Tube | ISOTOP® | Chassis Mount | POWER MOS 7® | -55°C ~ 150°C (TJ) |
![]() APT50GP60JDQ2 $27.56 | Microchip Technology | IGBT MOD 600V 100A 329W ISOTOP | Tube | ISOTOP® | Chassis Mount | POWER MOS 7® | -55°C ~ 150°C (TJ) |
![]() APT50GP60LDLG $9.13 | Microsemi Corporation | IGBT PT 600V 150A TO-264 | Tube | TO-264 | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() APT50GR120B2 $8.42 | Microchip Technology | IGBT NPT 1200V 117A TO-247 | Tube | TO-247 | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() APT50GR120JD30 $27.99 | Microchip Technology | IGBT MOD 1200V 84A 417W SOT227 | Tube | SOT-227 | Chassis Mount | - | -55°C ~ 150°C (TJ) |
![]() APT50GR120L $8.19 | Microchip Technology | IGBT NPT 1200V 117A TO-264 | Tube | TO-264 | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() APT50GS60BRDQ2G $12.36 | Microchip Technology | IGBT NPT 600V 93A TO247 | Tube | TO-247 [B] | Through Hole | Thunderbolt IGBT® | -55°C ~ 150°C (TJ) |
| Microchip Technology | IGBT NPT 600V 93A TO247 | Tube | TO-247 [B] | Through Hole | Thunderbolt IGBT® | -55°C ~ 150°C (TJ) |
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