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IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() APT50GLQ65JU2 $17.22 | Microchip Technology | IGBT MODULE 650V 80A 220W ISOTOP | Tube | ISOTOP® | Chassis Mount | - | -55°C ~ 175°C (TJ) |
![]() APT50GN120B2G $9.49 | Microchip Technology | IGBT NPT FIELD STOP 1200V 134A | Tube | - | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() APT50GN120L2DQ2G $15.25 | Microchip Technology | IGBT NPT FIELD STOP 1200V 134A | Tube | - | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() APT50GN60BDQ2G $6.18 | Microchip Technology | IGBT TRENCH FS 600V 107A TO247 | Tube | TO-247 [B] | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() APT50GN60BDQ3G $9.01 | Microchip Technology | IGBT TRENCH FS 600V 107A TO-247 | Tube | TO-247-3 | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() APT50GN60BG $4.54 | Microchip Technology | IGBT TRENCH FS 600V 107A TO247 | Tube | TO-247 [B] | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() APT50GP60B2DQ2G $12.25 | Microchip Technology | IGBT PT 600V 150A | Tube | - | Through Hole | POWER MOS 7® | -55°C ~ 150°C (TJ) |
![]() APT50GP60BG $10.91 | Microchip Technology | IGBT PT 600V 100A TO247 | Tube | TO-247 [B] | Through Hole | POWER MOS 7® | -55°C ~ 150°C (TJ) |
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