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IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() APT50GT120B2RDLG $16.12 | Microsemi Corporation | IGBT NPT 1200V 106A | Tube | - | Through Hole | Thunderbolt IGBT® | -55°C ~ 150°C (TJ) |
![]() APT50GT120B2RDQ2G $15.16 | Microchip Technology | IGBT NPT 1200V 94A TO247 | Tube | - | Through Hole | Thunderbolt IGBT® | -55°C ~ 150°C (TJ) |
![]() APT50GT120B2RG $13.97 | Microchip Technology | IGBT NPT 1200V 94A TO247 | Tube | - | Through Hole | Thunderbolt IGBT® | -55°C ~ 150°C (TJ) |
![]() APT50GT120JRDQ2 $33.69 | Microchip Technology | IGBT MOD 1200V 72A 379W ISOTOP | Tube | ISOTOP® | Chassis Mount | Thunderbolt IGBT® | -55°C ~ 150°C (TJ) |
![]() APT50GT120JU2 $19.65 | Microchip Technology | IGBT MOD 1200V 75A 347W SOT227 | Bulk | SOT-227 | Chassis Mount | - | -55°C ~ 150°C (TJ) |
![]() APT50GT120JU3 $19.65 | Microchip Technology | IGBT MOD 1200V 75A 347W SOT227 | Bulk | SOT-227 | Chassis Mount | - | -55°C ~ 150°C (TJ) |
![]() APT50GT120LRDQ2G $16.29 | Microchip Technology | IGBT NPT 1200V 106A TO264 | Tube | TO-264 [L] | Through Hole | Thunderbolt IGBT® | -55°C ~ 150°C (TJ) |
![]() APT50GT120LRG $14.91 | Microchip Technology | IGBT NPT 1200V 50A TO-264 | Tube | TO-264 (L) | Through Hole | Thunderbolt IGBT® | -55°C ~ 150°C (TJ) |
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