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IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() APT65GP60B2G $15.39 | Microchip Technology | IGBT PT 600V 100A | Tube | - | Through Hole | POWER MOS 7® | -55°C ~ 150°C (TJ) |
![]() APT65GP60J $30.64 | Microchip Technology | IGBT MOD 600V 130A 431W ISOTOP | Tube | ISOTOP® | Chassis Mount | POWER MOS 7® | -55°C ~ 150°C (TJ) |
![]() APT65GP60JDQ2 $32.15 | Microchip Technology | IGBT 600V 130A 431W SOT227 | Tube | ISOTOP® | Chassis Mount | POWER MOS 7® | - |
![]() APT65GP60L2DQ2G $17.60 | Microchip Technology | IGBT PT 600V 198A | Tube | - | Through Hole | POWER MOS 7® | -55°C ~ 150°C (TJ) |
![]() APT68GA60B $6.26 | Microchip Technology | IGBT PT 600V 121A TO247 | Tube | TO-247 [B] | Through Hole | POWER MOS 8™ | -55°C ~ 150°C (TJ) |
![]() APT68GA60B2D40 $8.75 | Microchip Technology | IGBT PT 600V 121A | Tube | - | Through Hole | POWER MOS 8™ | -55°C ~ 150°C (TJ) |
![]() APT68GA60LD40 $8.75 | Microchip Technology | IGBT PT 600V 121A TO264 | Tube | TO-264 [L] | Through Hole | POWER MOS 8™ | -55°C ~ 150°C (TJ) |
![]() APT70GR120B2 $10.33 | Microchip Technology | IGBT NPT 1200V 160A TO-247 | Tube | TO-247 | Through Hole | - | -55°C ~ 150°C (TJ) |
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