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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Microchip TechnologyIGBT MOD 1200V 112A 543W SOT227TubeSOT-227Chassis Mount--55°C ~ 150°C (TJ)
Microchip TechnologyIGBT MOD 1200V 112A 543W SOT227TubeSOT-227Chassis Mount--55°C ~ 150°C (TJ)
Microchip TechnologyIGBT NPT 1200V 160A TO-264TubeTO-264Through Hole--55°C ~ 150°C (TJ)
Microchip TechnologyIGBT NPT 650V 134A TO-247TubeTO-247Through Hole--55°C ~ 150°C (TJ)
Microsemi CorporationIGBT NPT 650V 134A TMAXBulkT-MAX™ [B2]Through Hole--55°C ~ 150°C (TJ)
Microchip TechnologyIGBT TRENCH FIELD STP 1200V 200ATube-Through Hole--55°C ~ 150°C (TJ)
Microchip TechnologyIGBT MOD 1200V 124A 379W ISOTOPTubeISOTOP®Chassis Mount--55°C ~ 150°C (TJ)
Microsemi CorporationIGBT MOD 1200V 124A 379W ISOTOPTubeISOTOP®Chassis Mount--55°C ~ 150°C (TJ)
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