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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Microchip TechnologyIGBT TRENCH FS 1200V 200A TO264TubeTO-264 [L]Through Hole--55°C ~ 150°C (TJ)
Microchip TechnologyIGBT TRENCH FS 600V 155A TO-247TubeTO-247-3Through Hole--55°C ~ 175°C (TJ)
Microchip TechnologyIGBT TRENCH FS 600V 155A TO247TubeTO-247 [B]Through Hole--55°C ~ 175°C (TJ)
Microchip TechnologyIGBT TRENCH FS 600V 155A TO264TubeTO-264 [L]Through Hole--55°C ~ 175°C (TJ)
Microchip TechnologyIGBT TRENCH FS 600V 155A D3PAKTubeD3PAKSurface Mount--55°C ~ 175°C (TJ)
Microchip TechnologyIGBT PT 1200V 100ATube-Through HolePOWER MOS 7®-55°C ~ 150°C (TJ)
Microchip TechnologyIGBT MOD 1200V 128A 543W ISOTOPTubeISOTOP®Chassis MountPOWER MOS 7®-55°C ~ 150°C (TJ)
Microchip TechnologyIGBT MOD 1200V 128A 543W ISOTOPTubeISOTOP®Chassis MountPOWER MOS 7®-55°C ~ 150°C (TJ)
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