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IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() APT75GN120LG $13.91 | Microchip Technology | IGBT TRENCH FS 1200V 200A TO264 | Tube | TO-264 [L] | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() APT75GN60BDQ2G $8.60 | Microchip Technology | IGBT TRENCH FS 600V 155A TO-247 | Tube | TO-247-3 | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() APT75GN60BG $5.98 | Microchip Technology | IGBT TRENCH FS 600V 155A TO247 | Tube | TO-247 [B] | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() APT75GN60LDQ3G $8.86 | Microchip Technology | IGBT TRENCH FS 600V 155A TO264 | Tube | TO-264 [L] | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() APT75GN60SDQ2G $9.08 | Microchip Technology | IGBT TRENCH FS 600V 155A D3PAK | Tube | D3PAK | Surface Mount | - | -55°C ~ 175°C (TJ) |
![]() APT75GP120B2G $21.69 | Microchip Technology | IGBT PT 1200V 100A | Tube | - | Through Hole | POWER MOS 7® | -55°C ~ 150°C (TJ) |
![]() APT75GP120J $37.29 | Microchip Technology | IGBT MOD 1200V 128A 543W ISOTOP | Tube | ISOTOP® | Chassis Mount | POWER MOS 7® | -55°C ~ 150°C (TJ) |
![]() APT75GP120JDQ3 $40.09 | Microchip Technology | IGBT MOD 1200V 128A 543W ISOTOP | Tube | ISOTOP® | Chassis Mount | POWER MOS 7® | -55°C ~ 150°C (TJ) |
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