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IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() APT80GA90LD40 $11.30 | Microchip Technology | IGBT PT 900V 145A TO-264 | Tube | TO-264 | Through Hole | POWER MOS 8™ | - |
![]() APT80GA90S $9.26 | Microchip Technology | IGBT PT 900V 145A D3PAK | Tube | D3PAK | Surface Mount | POWER MOS 8® | -55°C ~ 150°C (TJ) |
![]() APT80GP60B2G $19.65 | Microchip Technology | IGBT PT 600V 100A TMAX | Tube | T-MAX™ [B2] | Through Hole | POWER MOS 7® | - |
![]() APT80GP60J $35.21 | Microchip Technology | IGBT MOD 600V 151A 462W ISOTOP | Tube | ISOTOP® | Chassis Mount | POWER MOS 7® | -55°C ~ 150°C (TJ) |
![]() APT80GP60JDQ3 $35.16 | Microchip Technology | IGBT 600V 151A 462W SOT227 | Tube | ISOTOP® | Chassis Mount | POWER MOS 7® | - |
![]() APT85GR120B2 $12.02 | Microchip Technology | IGBT NPT 1200V 170A T-MAX | Tube | T-MAX™ | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() APT85GR120J $27.12 | Microchip Technology | IGBT MOD 1200V 116A 543W SOT227 | Tube | SOT-227 | Chassis Mount | - | -55°C ~ 150°C (TJ) |
![]() APT85GR120JD60 $31.40 | Microchip Technology | IGBT MOD 1200V 116A 543W SOT227 | Tube | SOT-227 | Chassis Mount | - | -55°C ~ 150°C (TJ) |
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