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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Microchip TechnologyIGBT PT 900V 145A TO-264TubeTO-264Through HolePOWER MOS 8™-
Microchip TechnologyIGBT PT 900V 145A D3PAKTubeD3PAKSurface MountPOWER MOS 8®-55°C ~ 150°C (TJ)
Microchip TechnologyIGBT PT 600V 100A TMAXTubeT-MAX™ [B2]Through HolePOWER MOS 7®-
Microchip TechnologyIGBT MOD 600V 151A 462W ISOTOPTubeISOTOP®Chassis MountPOWER MOS 7®-55°C ~ 150°C (TJ)
Microchip TechnologyIGBT 600V 151A 462W SOT227TubeISOTOP®Chassis MountPOWER MOS 7®-
Microchip TechnologyIGBT NPT 1200V 170A T-MAXTubeT-MAX™Through Hole--55°C ~ 150°C (TJ)
Microchip TechnologyIGBT MOD 1200V 116A 543W SOT227TubeSOT-227Chassis Mount--55°C ~ 150°C (TJ)
Microchip TechnologyIGBT MOD 1200V 116A 543W SOT227TubeSOT-227Chassis Mount--55°C ~ 150°C (TJ)
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