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IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
| Microchip Technology | IGBT PT MOS 7 COMBI 1200 V 75 A | Tube | - | - | - | - | |
![]() APT75GT120JRDQ3 $39.62 | Microchip Technology | IGBT MOD 1200V 97A 480W ISOTOP | Tube | ISOTOP® | Chassis Mount | Thunderbolt IGBT® | -55°C ~ 150°C (TJ) |
![]() APT75GT120JU2 $23.10 | Microchip Technology | IGBT MOD 1200V 100A 416W SOT227 | Bulk | SOT-227 | Chassis Mount | - | -55°C ~ 150°C (TJ) |
![]() APT75GT120JU3 $23.10 | Microchip Technology | IGBT MOD 1200V 100A 416W SOT227 | Bulk | SOT-227 | Chassis Mount | - | -55°C ~ 150°C (TJ) |
![]() APT80GA60B $7.53 | Microchip Technology | IGBT PT 600V 143A TO247 | Tube | TO-247 [B] | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() APT80GA60LD40 $10.03 | Microchip Technology | IGBT PT 600V 143A TO-264 | Tube | TO-264 | Through Hole | POWER MOS 8™ | -55°C ~ 150°C (TJ) |
![]() APT80GA90B $8.42 | Microchip Technology | IGBT PT 900V 145A TO247 | Tube | TO-247 [B] | Through Hole | - | -55°C ~ 150°C (TJ) |
| Microchip Technology | IGBT PT MOS 8 COMBI 900 V 80 A T | Tube | - | - | - | - |
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IXA20PG1200DHG-TUBView Product
FS75R12N2T4B85BPSA1View Product
NGTB40N65IHRWGView Product
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VS-GT250SA60SView Product
BSM300GA170DN2HOSA1View Product
IXA30PG1200DHG-TUBView Product
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