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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Microchip TechnologyIGBT PT MOS 7 COMBI 1200 V 75 ATube----
Microchip TechnologyIGBT MOD 1200V 97A 480W ISOTOPTubeISOTOP®Chassis MountThunderbolt IGBT®-55°C ~ 150°C (TJ)
Microchip TechnologyIGBT MOD 1200V 100A 416W SOT227BulkSOT-227Chassis Mount--55°C ~ 150°C (TJ)
Microchip TechnologyIGBT MOD 1200V 100A 416W SOT227BulkSOT-227Chassis Mount--55°C ~ 150°C (TJ)
Microchip TechnologyIGBT PT 600V 143A TO247TubeTO-247 [B]Through Hole--55°C ~ 150°C (TJ)
Microchip TechnologyIGBT PT 600V 143A TO-264TubeTO-264Through HolePOWER MOS 8™-55°C ~ 150°C (TJ)
Microchip TechnologyIGBT PT 900V 145A TO247TubeTO-247 [B]Through Hole--55°C ~ 150°C (TJ)
Microchip TechnologyIGBT PT MOS 8 COMBI 900 V 80 A TTube----
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