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IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
| Microchip Technology | IGBT NPT 600V 110A TO247 | Tube | TO-247 [B] | Through Hole | Thunderbolt IGBT® | -55°C ~ 150°C (TJ) | |
| Microchip Technology | IGBT NPT 600V 110A TO247 | Tube | TO-247 [B] | Through Hole | Thunderbolt IGBT® | -55°C ~ 150°C (TJ) | |
![]() APT54GA60B $4.93 | Microchip Technology | IGBT PT 600V 96A TO247 | Tube | TO-247 [B] | Through Hole | POWER MOS 8™ | -55°C ~ 150°C (TJ) |
![]() APT54GA60BD30 $5.94 | Microchip Technology | IGBT PT 600V 96A TO247 | Tube | TO-247 [B] | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() APT60GA60JD60 $25.25 | Microchip Technology | IGBT MOD 600V 112A 356W ISOTOP | Tube | ISOTOP® | Chassis Mount | POWER MOS 8™ | -55°C ~ 150°C (TJ) |
![]() APT60GF120JRD $63.47 | Microchip Technology | IGBT NPT COMBI 1200V 60A ISOTOP | Tube | SOT-227 (ISOTOP®) | Chassis Mount | - | -55°C ~ 150°C (TJ) |
![]() APT60GF120JRDQ3 $96.08 | Microchip Technology | IGBT MOD 1200V 149A 625W ISOTOP | Tube | ISOTOP® | Chassis Mount | - | -55°C ~ 150°C (TJ) |
![]() APT60GF60JU2 $13.02 | Microchip Technology | IGBT MODULE 600V 93A 378W SOT227 | Bulk | SOT-227 | Chassis Mount | - | - |
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