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IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() APT45GP120B2DQ2G $17.48 | Microchip Technology | IGBT PT 1200V 113A | Tube | - | Through Hole | POWER MOS 7® | -55°C ~ 150°C (TJ) |
![]() APT45GP120BG $15.23 | Microchip Technology | IGBT PT 1200V 100A TO247 | Tube | TO-247 [B] | Through Hole | POWER MOS 7® | -55°C ~ 150°C (TJ) |
![]() APT45GP120J $34.14 | Microchip Technology | IGBT MOD 1200V 75A 329W ISOTOP | Tube | ISOTOP® | Chassis Mount | POWER MOS 7® | -55°C ~ 150°C (TJ) |
![]() APT45GP120JDQ2 $36.73 | Microchip Technology | IGBT MOD 1200V 75A 329W ISOTOP | Tube | ISOTOP® | Chassis Mount | POWER MOS 7® | -55°C ~ 150°C (TJ) |
![]() APT45GR65B $3.30 | Microchip Technology | IGBT NPT 650V 92A TO-247 | Tube | TO-247 | Through Hole | - | - |
| Microsemi Corporation | IGBT NPT 650V 118A TO-247 | Bulk | TO-247 | Through Hole | - | -55°C ~ 150°C (TJ) | |
| Microsemi Corporation | IGBT NPT 650V 118A D3PAK | Bulk | D3PAK | Surface Mount | - | -55°C ~ 150°C (TJ) | |
![]() APT46GA90JD40 $23.83 | Microchip Technology | IGBT MODULE 900V 87A 284W ISOTOP | Tube | ISOTOP® | Chassis Mount | POWER MOS 8™ | -55°C ~ 150°C (TJ) |
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