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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Microchip TechnologyIGBT PT 1200V 113ATube-Through HolePOWER MOS 7®-55°C ~ 150°C (TJ)
Microchip TechnologyIGBT PT 1200V 100A TO247TubeTO-247 [B]Through HolePOWER MOS 7®-55°C ~ 150°C (TJ)
Microchip TechnologyIGBT MOD 1200V 75A 329W ISOTOPTubeISOTOP®Chassis MountPOWER MOS 7®-55°C ~ 150°C (TJ)
Microchip TechnologyIGBT MOD 1200V 75A 329W ISOTOPTubeISOTOP®Chassis MountPOWER MOS 7®-55°C ~ 150°C (TJ)
Microchip TechnologyIGBT NPT 650V 92A TO-247TubeTO-247Through Hole--
Microsemi CorporationIGBT NPT 650V 118A TO-247BulkTO-247Through Hole--55°C ~ 150°C (TJ)
Microsemi CorporationIGBT NPT 650V 118A D3PAKBulkD3PAKSurface Mount--55°C ~ 150°C (TJ)
Microchip TechnologyIGBT MODULE 900V 87A 284W ISOTOPTubeISOTOP®Chassis MountPOWER MOS 8™-55°C ~ 150°C (TJ)
Add ComparisonUp to 4 can be added

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