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FII30-12EView Product
IGBTs
IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
Screen Default Ranking Price By Date
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
 APT35GA90BD15 $4.99 | Microchip Technology | IGBT PT 900V 63A TO247 | Tube | TO-247 [B] | Through Hole | - | -55°C ~ 150°C (TJ) |
APT35GN120BG $7.20 | Microchip Technology | IGBT NPT FS 1200V 94A TO247 | Tube | TO-247 [B] | Through Hole | - | -55°C ~ 150°C (TJ) |
 APT35GN120L2DQ2G $9.16 | Microchip Technology | IGBT NPT FIELD STOP 1200V 94A | Tube | - | Through Hole | - | -55°C ~ 150°C (TJ) |
 APT35GN120SG $8.13 | Microchip Technology | IGBT NPT FS 1200V 94A D3PAK | Tube | D3PAK | Surface Mount | - | -55°C ~ 150°C (TJ) |
APT35GN120SG/TR $9.08 | Microchip Technology | IGBT NPT FS 1200V 84A D3PAK | Tape & Reel (TR),Cut Tape (CT) | D3PAK | Surface Mount | - | -55°C ~ 150°C (TJ) |
 APT35GP120B2D2G $16.39 | Microchip Technology | IGBT PT 1200V 96A TMAX | Tube | T-MAX™ [B2] | Through Hole | POWER MOS 7® | -55°C ~ 150°C (TJ) |
APT35GP120B2DQ2G $16.54 | Microchip Technology | IGBT PT 1200V 96A | Tube | - | Through Hole | POWER MOS 7® | -55°C ~ 150°C (TJ) |
| Microchip Technology | IGBT PT MOS 7 COMBI 1200 V 35 A | Tube | - | - | - | - |
