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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Microchip TechnologyIGBT PT 1200V 96A TO247TubeTO-247 [B]Through HolePOWER MOS 7®-55°C ~ 150°C (TJ)
Microchip TechnologyIGBT MOD 1200V 64A 284W ISOTOPTubeISOTOP®Chassis MountPOWER MOS 7®-55°C ~ 150°C (TJ)
Microchip TechnologyIGBT MOD 1200V 64A 284W ISOTOPTubeISOTOP®Chassis MountPOWER MOS 7®-55°C ~ 150°C (TJ)
Microchip TechnologyIGBT MOD 1200V 55A 260W SOT227BulkSOT-227Chassis Mount--55°C ~ 150°C (TJ)
Microchip TechnologyIGBT MOD 1200V 55A 260W SOT227BulkSOT-227Chassis Mount--55°C ~ 150°C (TJ)
Microchip TechnologyIGBT PT 600V 65A TO247TubeTO-247 [B]Through HolePOWER MOS 8™-55°C ~ 150°C (TJ)
Microchip TechnologyIGBT PT 600V 65A TO247TubeTO-247 [B]Through HolePOWER MOS 8™-55°C ~ 150°C (TJ)
Microchip TechnologyIGBT PT 600V 65A D3PAKTubeD3PAKSurface MountPOWER MOS 8®-55°C ~ 150°C (TJ)
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