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IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() APT35GP120BG $13.35 | Microchip Technology | IGBT PT 1200V 96A TO247 | Tube | TO-247 [B] | Through Hole | POWER MOS 7® | -55°C ~ 150°C (TJ) |
![]() APT35GP120J $32.19 | Microchip Technology | IGBT MOD 1200V 64A 284W ISOTOP | Tube | ISOTOP® | Chassis Mount | POWER MOS 7® | -55°C ~ 150°C (TJ) |
![]() APT35GP120JDQ2 $36.88 | Microchip Technology | IGBT MOD 1200V 64A 284W ISOTOP | Tube | ISOTOP® | Chassis Mount | POWER MOS 7® | -55°C ~ 150°C (TJ) |
![]() APT35GT120JU2 $18.20 | Microchip Technology | IGBT MOD 1200V 55A 260W SOT227 | Bulk | SOT-227 | Chassis Mount | - | -55°C ~ 150°C (TJ) |
![]() APT35GT120JU3 $18.20 | Microchip Technology | IGBT MOD 1200V 55A 260W SOT227 | Bulk | SOT-227 | Chassis Mount | - | -55°C ~ 150°C (TJ) |
| Microchip Technology | IGBT PT 600V 65A TO247 | Tube | TO-247 [B] | Through Hole | POWER MOS 8™ | -55°C ~ 150°C (TJ) | |
| Microchip Technology | IGBT PT 600V 65A TO247 | Tube | TO-247 [B] | Through Hole | POWER MOS 8™ | -55°C ~ 150°C (TJ) | |
| Microchip Technology | IGBT PT 600V 65A D3PAK | Tube | D3PAK | Surface Mount | POWER MOS 8® | -55°C ~ 150°C (TJ) |
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