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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() IKN06N60RC2ATMA1 $1.10 | Infineon Technologies | IGBT 600V 8A SOT223-3 | Tape & Reel (TR),Cut Tape (CT) | PG-SOT223-3 | Surface Mount | - | -40°C ~ 150°C (TJ) |
![]() IKP01N120H2XKSA1 $1.37 | Infineon Technologies | IGBT 1200V 3.2A TO220-3 | Tube | PG-TO220-3-1 | Through Hole | - | -40°C ~ 150°C (TJ) |
| Infineon Technologies | IGBT 1200V 9.6A TO220-3 | Tube | PG-TO220-3-1 | Through Hole | - | -40°C ~ 150°C (TJ) | |
![]() IKP04N60TXKSA1 $1.79 | Infineon Technologies | IGBT TRENCH FS 600V 8A TO220-3 | Tube | PG-TO220-3-1 | Through Hole | TrenchStop® | -40°C ~ 175°C (TJ) |
![]() IKP06N60TXKSA1 $1.85 | Infineon Technologies | IGBT TRENCH FS 600V 12A TO220-3 | Tube | PG-TO220-3-1 | Through Hole | TrenchStop® | -40°C ~ 175°C (TJ) |
![]() IKP08N65F5XKSA1 $2.19 | Infineon Technologies | IGBT 650V 18A TO220-3 | Tube | PG-TO220-3-111 | Through Hole | TrenchStop® | -40°C ~ 175°C (TJ) |
![]() IKP08N65H5XKSA1 $2.41 | Infineon Technologies | IGBT 650V 18A TO220-3 | Tube | PG-TO220-3-111 | Through Hole | TrenchStop® | -40°C ~ 175°C (TJ) |
![]() IKP10N60TXKSA1 $2.03 | Infineon Technologies | IGBT NPT FS 600V 20A TO220-3 | Tube | PG-TO220-3-1 | Through Hole | TrenchStop® | -40°C ~ 175°C (TJ) |