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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
International RectifierIRG4BC40 - DISCRETE IGBT WITHOUTBulk--*-
Infineon TechnologiesIGBT 600V 60A TO-220ABTubeTO-220ABThrough Hole--55°C ~ 150°C (TJ)
Infineon TechnologiesIGBT 600V 40A TO-220ABTubeTO-220ABThrough Hole--55°C ~ 150°C (TJ)
International RectifierIGBT 600V 40A TO-220ABBulkTO-220ABThrough Hole--55°C ~ 150°C (TJ)
Infineon TechnologiesULTRAFAST SPEED IGBTBulk--*-
Infineon TechnologiesIGBT 600V 40A TO-220ABTubeTO-220ABThrough Hole--55°C ~ 150°C (TJ)
Infineon TechnologiesIGBT 600V 40A TO-262TubeTO-262Through Hole--55°C ~ 150°C (TJ)
Infineon TechnologiesIGBT 600V 40A 160W D2PAKTubeD2PAKSurface Mount--55°C ~ 150°C (TJ)
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