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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Infineon TechnologiesIGBT 600V 6.8A TO220-FPTubePG-TO220-FPThrough Hole--55°C ~ 150°C (TJ)
Infineon TechnologiesIGBT 600V 6.8A TO220AB FPBulk,TubeTO-220AB Full-PakThrough Hole--55°C ~ 150°C (TJ)
Infineon TechnologiesIGBT 600V 14.3A TO220-FPTubePG-TO220-FPThrough Hole--55°C ~ 150°C (TJ)
Infineon TechnologiesIGBT 600V 14.3A TO220AB FPBulk,TubeTO-220AB Full-PakThrough Hole--55°C ~ 150°C (TJ)
Infineon TechnologiesIGBT 600V 11.5A TO220-FPTubePG-TO220-FPThrough Hole--55°C ~ 150°C (TJ)
Infineon TechnologiesIGBT 600V 11.5A TO220AB FPTubeTO-220AB Full-PakThrough Hole--55°C ~ 150°C (TJ)
International RectifierIGBT 600V 11.4A TO220AB FPBulkTO-220AB Full-PakThrough Hole--55°C ~ 150°C (TJ)
Infineon TechnologiesIGBT 600V 11.8A TO220-FPTubePG-TO220-FPThrough Hole--55°C ~ 150°C (TJ)
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