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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Infineon TechnologiesIGBT 600V 17A TO220AB FPTubeTO-220AB Full-PakThrough Hole--55°C ~ 150°C (TJ)
Infineon TechnologiesIGBT 600V 17A TO220-FPTubePG-TO220-FPThrough Hole--55°C ~ 150°C (TJ)
Infineon TechnologiesIGBT 600V 17A TO220AB FPTubeTO-220AB Full-PakThrough Hole--55°C ~ 150°C (TJ)
Infineon TechnologiesIGBT 250V 98A TO-247ACBagTO-247ACThrough Hole--55°C ~ 150°C (TJ)
Infineon TechnologiesIGBT 250V 98A TO-247ACBagTO-247ACThrough Hole--55°C ~ 150°C (TJ)
Infineon TechnologiesIGBT 600V 31A TO-247ACTubeTO-247ACThrough Hole--55°C ~ 150°C (TJ)
International RectifierIGBT 600V 31A TO-247ACBulkTO-247ACThrough Hole--55°C ~ 150°C (TJ)
Infineon TechnologiesIGBT 600V 28A TO-247ACBagTO-247ACThrough Hole--55°C ~ 150°C (TJ)
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