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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() IRG4BC30S-STRLP $1.13 | Infineon Technologies | IGBT 600V 34A 100W D2PAK | Tape & Reel (TR),Bulk | D2PAK | Surface Mount | - | -55°C ~ 150°C (TJ) |
![]() IRG4BC30SPBF $1.18 | International Rectifier | IGBT 600V 34A TO-220AB | Bulk | TO-220AB | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() IRG4BC30SPBF-INF $1.18 | Infineon Technologies | IGBT 600V 34A TO-220AB | Bulk | TO-220AB | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() IRG4BC30U $1.32 | Infineon Technologies | IGBT 600V 23A TO-220AB | Tube | TO-220AB | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() IRG4BC30U-S $1.46 | Infineon Technologies | IGBT 600V 23A 100W D2PAK | Tube | D2PAK | Surface Mount | - | -55°C ~ 150°C (TJ) |
| Infineon Technologies | IGBT 600V 23A 100W D2PAK | Tape & Reel (TR) | D2PAK | Surface Mount | - | -55°C ~ 150°C (TJ) | |
| Infineon Technologies | IGBT 600V 23A TO-220AB | Tube | TO-220AB | Through Hole | - | -55°C ~ 150°C (TJ) | |
![]() IRG4BC30UPBF $1.17 | International Rectifier | IGBT 600V 23A TO-220AB | Bulk | TO-220AB | Through Hole | - | -55°C ~ 150°C (TJ) |

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