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Single IGBTs
Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
Screen Default Ranking Price By Date
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
 APT50GN120B2G $9.49 | Microchip Technology | IGBT NPT FIELD STOP 1200V 134A | Tube | - | Through Hole | - | -55°C ~ 150°C (TJ) |
 APT50GN120L2DQ2G $15.25 | Microchip Technology | IGBT NPT FIELD STOP 1200V 134A | Tube | - | Through Hole | - | -55°C ~ 150°C (TJ) |
 APT50GN60BDQ2G $6.18 | Microchip Technology | IGBT TRENCH FS 600V 107A TO247 | Tube | TO-247 [B] | Through Hole | - | -55°C ~ 175°C (TJ) |
 APT50GN60BDQ3G $9.01 | Microchip Technology | IGBT TRENCH FS 600V 107A TO-247 | Tube | TO-247-3 | Through Hole | - | -55°C ~ 175°C (TJ) |
APT50GN60BG $4.54 | Microchip Technology | IGBT TRENCH FS 600V 107A TO247 | Tube | TO-247 [B] | Through Hole | - | -55°C ~ 175°C (TJ) |
APT50GP60B2DQ2G $12.25 | Microchip Technology | IGBT PT 600V 150A | Tube | - | Through Hole | POWER MOS 7® | -55°C ~ 150°C (TJ) |
APT50GP60BG $10.91 | Microchip Technology | IGBT PT 600V 100A TO247 | Tube | TO-247 [B] | Through Hole | POWER MOS 7® | -55°C ~ 150°C (TJ) |
 APT50GP60LDLG $9.13 | Microsemi Corporation | IGBT PT 600V 150A TO-264 | Tube | TO-264 | Through Hole | - | -55°C ~ 150°C (TJ) |
