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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Microchip TechnologyIGBT NPT 1200V 117A TO-247TubeTO-247Through Hole--55°C ~ 150°C (TJ)
Microchip TechnologyIGBT NPT 1200V 117A TO-264TubeTO-264Through Hole--55°C ~ 150°C (TJ)
Microchip TechnologyIGBT NPT 600V 93A TO247TubeTO-247 [B]Through HoleThunderbolt IGBT®-55°C ~ 150°C (TJ)
Microchip TechnologyIGBT NPT 600V 93A TO247TubeTO-247 [B]Through HoleThunderbolt IGBT®-55°C ~ 150°C (TJ)
Microsemi CorporationIGBT NPT 1200V 106ATube-Through HoleThunderbolt IGBT®-55°C ~ 150°C (TJ)
Microchip TechnologyIGBT NPT 1200V 94A TO247Tube-Through HoleThunderbolt IGBT®-55°C ~ 150°C (TJ)
Microchip TechnologyIGBT NPT 1200V 94A TO247Tube-Through HoleThunderbolt IGBT®-55°C ~ 150°C (TJ)
Microchip TechnologyIGBT NPT 1200V 106A TO264TubeTO-264 [L]Through HoleThunderbolt IGBT®-55°C ~ 150°C (TJ)
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