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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() APT70GR120L $10.24 | Microchip Technology | IGBT NPT 1200V 160A TO-264 | Tube | TO-264 | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() APT70GR65B $5.78 | Microchip Technology | IGBT NPT 650V 134A TO-247 | Tube | TO-247 | Through Hole | - | -55°C ~ 150°C (TJ) |
| Microsemi Corporation | IGBT NPT 650V 134A TMAX | Bulk | T-MAX™ [B2] | Through Hole | - | -55°C ~ 150°C (TJ) | |
![]() APT75GN120B2G $13.91 | Microchip Technology | IGBT TRENCH FIELD STP 1200V 200A | Tube | - | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() APT75GN120LG $13.91 | Microchip Technology | IGBT TRENCH FS 1200V 200A TO264 | Tube | TO-264 [L] | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() APT75GN60BDQ2G $8.60 | Microchip Technology | IGBT TRENCH FS 600V 155A TO-247 | Tube | TO-247-3 | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() APT75GN60BG $5.98 | Microchip Technology | IGBT TRENCH FS 600V 155A TO247 | Tube | TO-247 [B] | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() APT75GN60LDQ3G $8.86 | Microchip Technology | IGBT TRENCH FS 600V 155A TO264 | Tube | TO-264 [L] | Through Hole | - | -55°C ~ 175°C (TJ) |

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