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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Microchip TechnologyIGBT NPT 1200V 160A TO-264TubeTO-264Through Hole--55°C ~ 150°C (TJ)
Microchip TechnologyIGBT NPT 650V 134A TO-247TubeTO-247Through Hole--55°C ~ 150°C (TJ)
Microsemi CorporationIGBT NPT 650V 134A TMAXBulkT-MAX™ [B2]Through Hole--55°C ~ 150°C (TJ)
Microchip TechnologyIGBT TRENCH FIELD STP 1200V 200ATube-Through Hole--55°C ~ 150°C (TJ)
Microchip TechnologyIGBT TRENCH FS 1200V 200A TO264TubeTO-264 [L]Through Hole--55°C ~ 150°C (TJ)
Microchip TechnologyIGBT TRENCH FS 600V 155A TO-247TubeTO-247-3Through Hole--55°C ~ 175°C (TJ)
Microchip TechnologyIGBT TRENCH FS 600V 155A TO247TubeTO-247 [B]Through Hole--55°C ~ 175°C (TJ)
Microchip TechnologyIGBT TRENCH FS 600V 155A TO264TubeTO-264 [L]Through Hole--55°C ~ 175°C (TJ)
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