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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() APT75GN60SDQ2G $9.08 | Microchip Technology | IGBT TRENCH FS 600V 155A D3PAK | Tube | D3PAK | Surface Mount | - | -55°C ~ 175°C (TJ) |
![]() APT75GP120B2G $21.69 | Microchip Technology | IGBT PT 1200V 100A | Tube | - | Through Hole | POWER MOS 7® | -55°C ~ 150°C (TJ) |
| Microchip Technology | IGBT PT MOS 7 COMBI 1200 V 75 A | Tube | - | - | - | - | |
![]() APT80GA60B $7.53 | Microchip Technology | IGBT PT 600V 143A TO247 | Tube | TO-247 [B] | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() APT80GA60LD40 $10.03 | Microchip Technology | IGBT PT 600V 143A TO-264 | Tube | TO-264 | Through Hole | POWER MOS 8™ | -55°C ~ 150°C (TJ) |
![]() APT80GA90B $8.42 | Microchip Technology | IGBT PT 900V 145A TO247 | Tube | TO-247 [B] | Through Hole | - | -55°C ~ 150°C (TJ) |
| Microchip Technology | IGBT PT MOS 8 COMBI 900 V 80 A T | Tube | - | - | - | - | |
![]() APT80GA90LD40 $11.30 | Microchip Technology | IGBT PT 900V 145A TO-264 | Tube | TO-264 | Through Hole | POWER MOS 8™ | - |

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