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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Microchip TechnologyIGBT TRENCH FS 600V 155A D3PAKTubeD3PAKSurface Mount--55°C ~ 175°C (TJ)
Microchip TechnologyIGBT PT 1200V 100ATube-Through HolePOWER MOS 7®-55°C ~ 150°C (TJ)
Microchip TechnologyIGBT PT MOS 7 COMBI 1200 V 75 ATube----
Microchip TechnologyIGBT PT 600V 143A TO247TubeTO-247 [B]Through Hole--55°C ~ 150°C (TJ)
Microchip TechnologyIGBT PT 600V 143A TO-264TubeTO-264Through HolePOWER MOS 8™-55°C ~ 150°C (TJ)
Microchip TechnologyIGBT PT 900V 145A TO247TubeTO-247 [B]Through Hole--55°C ~ 150°C (TJ)
Microchip TechnologyIGBT PT MOS 8 COMBI 900 V 80 A TTube----
Microchip TechnologyIGBT PT 900V 145A TO-264TubeTO-264Through HolePOWER MOS 8™-
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