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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Infineon TechnologiesDISCRETESBulk,TubeTO-247ADThrough HoleCooliRIGBT™-
Infineon TechnologiesIGBT 600V 62A TO-247ADTubeTO-247ADThrough HoleCooliRIGBT™-55°C ~ 175°C (TJ)
Infineon TechnologiesIGBT 600V 60A TO-247ADBulk,TubeTO-247ADThrough Hole--55°C ~ 175°C (TJ)
International RectifierIGBT 600V 60A TO-247ACBulkTO-247ACThrough Hole--55°C ~ 175°C (TJ)
Infineon TechnologiesIGBT NPT 600V 60A TO-247ACTubeTO-247ACThrough Hole--55°C ~ 150°C (TJ)
Infineon TechnologiesIGBT NPT 600V 60A TO-247ADTubeTO-247ADThrough Hole--55°C ~ 150°C (TJ)
International RectifierIGBT 600V 48A TO-247ACBulkTO-247ACThrough Hole--55°C ~ 175°C (TJ)
Infineon TechnologiesIGBT 600V 48A TO247ADBulk,TubePG-TO247ADThrough Hole--55°C ~ 175°C (TJ)
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