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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Microchip TechnologyIGBT PT 900V 145A D3PAKTubeD3PAKSurface MountPOWER MOS 8®-55°C ~ 150°C (TJ)
Microchip TechnologyIGBT PT 600V 100A TMAXTubeT-MAX™ [B2]Through HolePOWER MOS 7®-
Microchip TechnologyIGBT NPT 1200V 170A T-MAXTubeT-MAX™Through Hole--55°C ~ 150°C (TJ)
Microchip TechnologyIGBT NPT 1200V 170A TO-264TubeTO-264Through Hole--55°C ~ 150°C (TJ)
Microchip TechnologyIGBT NPT 650V 208A TMAXTubeT-MAX™ [B2]Through Hole--55°C ~ 150°C (TJ)
Microsemi CorporationIGBT NPT 650V 135A SOT-227BulkSOT-227Chassis Mount--55°C ~ 150°C (TJ)
Infineon TechnologiesIGBTBulk--*-
Infineon TechnologiesIGBT 600V 34A 100W D2PAKTape & Reel (TR),Cut Tape (CT)D2PAKSurface Mount--55°C ~ 150°C (TJ)
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