ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Single IGBTs
Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
Screen Default Ranking Price By Date
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
| Microchip Technology | IGBT PT MOS 8 COMBI 900 V 64 A T | Tube | - | - | - | - | |
 APT64GA90LD30 $9.27 | Microchip Technology | IGBT PT 900V 117A TO264 | Tube | TO-264 [L] | Through Hole | POWER MOS 8™ | -55°C ~ 150°C (TJ) |
 APT65GP60B2G $15.39 | Microchip Technology | IGBT PT 600V 100A | Tube | - | Through Hole | POWER MOS 7® | -55°C ~ 150°C (TJ) |
APT65GP60L2DQ2G $17.60 | Microchip Technology | IGBT PT 600V 198A | Tube | - | Through Hole | POWER MOS 7® | -55°C ~ 150°C (TJ) |
 APT68GA60B $6.26 | Microchip Technology | IGBT PT 600V 121A TO247 | Tube | TO-247 [B] | Through Hole | POWER MOS 8™ | -55°C ~ 150°C (TJ) |
APT68GA60B2D40 $8.75 | Microchip Technology | IGBT PT 600V 121A | Tube | - | Through Hole | POWER MOS 8™ | -55°C ~ 150°C (TJ) |
APT68GA60LD40 $8.75 | Microchip Technology | IGBT PT 600V 121A TO264 | Tube | TO-264 [L] | Through Hole | POWER MOS 8™ | -55°C ~ 150°C (TJ) |
APT70GR120B2 $10.33 | Microchip Technology | IGBT NPT 1200V 160A TO-247 | Tube | TO-247 | Through Hole | - | -55°C ~ 150°C (TJ) |
