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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
International RectifierIGBT 600V 23A D2PAKBulkD2PAKSurface Mount--55°C ~ 150°C (TJ)
International RectifierIGBT 600V 23A D2PAKBulkD2PAKSurface Mount--55°C ~ 150°C (TJ)
Infineon TechnologiesAUIRG4PC40 - AUTOMOTIVE IGBT DISBulk--*-
Infineon TechnologiesIGBT 1200V 141A TO-247ACTubeTO-247ACThrough Hole--55°C ~ 150°C (TJ)
Infineon TechnologiesIGBT 1200V 141A TO-247ACTubeTO-247ACThrough Hole--55°C ~ 150°C (TJ)
Infineon TechnologiesIGBT TRENCH 600V 59A TO-220ABTubeTO-220ABThrough Hole--55°C ~ 175°C (TJ)
Infineon TechnologiesIGBT 1200V 141A SUPER-220TubeSUPER-220™ (TO-273AA)Through Hole--55°C ~ 150°C (TJ)
Infineon TechnologiesIGBT 1200V 141A SUPER-220TubeSUPER-220™ (TO-273AA)Through Hole--55°C ~ 150°C (TJ)
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