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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() APT40GR120S $7.21 | Microchip Technology | IGBT NPT 1200V 88A D3PAK | Tube | D3PAK | Surface Mount | - | -55°C ~ 150°C (TJ) |
![]() APT40GT60BRG $8.92 | Microchip Technology | IGBT NPT 600V 80A TO247 | Tube | TO-247 [B] | Through Hole | Thunderbolt IGBT® | -55°C ~ 150°C (TJ) |
![]() APT43GA90B $4.89 | Microchip Technology | IGBT PT 900V 78A TO247 | Tube | TO-247 [B] | Through Hole | POWER MOS 8™ | -55°C ~ 150°C (TJ) |
![]() APT43GA90BD30 $6.14 | Microchip Technology | IGBT PT 900V 78A TO247 | Tube | TO-247 [B] | Through Hole | - | -55°C ~ 150°C (TJ) |
| Microchip Technology | IGBT PT MOS 8 COMBI 900 V 43 A T | Tube | - | - | - | - | |
![]() APT44GA60B $5.85 | Microchip Technology | IGBT PT 600V 78A TO247 | Tube | TO-247 [B] | Through Hole | POWER MOS 8™ | -55°C ~ 150°C (TJ) |
![]() APT44GA60BD30 $5.43 | Microchip Technology | IGBT PT 600V 78A TO247 | Tube | TO-247 [B] | Through Hole | POWER MOS 8™ | -55°C ~ 150°C (TJ) |
![]() APT44GA60BD30C $4.68 | Microsemi Corporation | IGBT PT 600V 78A TO247 | Tube | TO-247 [B] | Through Hole | POWER MOS 8™ | - |

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