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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Microchip TechnologyIGBT NPT 1200V 88A D3PAKTubeD3PAKSurface Mount--55°C ~ 150°C (TJ)
Microchip TechnologyIGBT NPT 600V 80A TO247TubeTO-247 [B]Through HoleThunderbolt IGBT®-55°C ~ 150°C (TJ)
Microchip TechnologyIGBT PT 900V 78A TO247TubeTO-247 [B]Through HolePOWER MOS 8™-55°C ~ 150°C (TJ)
Microchip TechnologyIGBT PT 900V 78A TO247TubeTO-247 [B]Through Hole--55°C ~ 150°C (TJ)
Microchip TechnologyIGBT PT MOS 8 COMBI 900 V 43 A TTube----
Microchip TechnologyIGBT PT 600V 78A TO247TubeTO-247 [B]Through HolePOWER MOS 8™-55°C ~ 150°C (TJ)
Microchip TechnologyIGBT PT 600V 78A TO247TubeTO-247 [B]Through HolePOWER MOS 8™-55°C ~ 150°C (TJ)
Microsemi CorporationIGBT PT 600V 78A TO247TubeTO-247 [B]Through HolePOWER MOS 8™-
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