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Single IGBTs
Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
Screen Default Ranking Price By Date
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
 APT35GN120SG/TR $9.08 | Microchip Technology | IGBT NPT FS 1200V 84A D3PAK | Tape & Reel (TR),Cut Tape (CT) | D3PAK | Surface Mount | - | -55°C ~ 150°C (TJ) |
 APT35GP120B2D2G $16.39 | Microchip Technology | IGBT PT 1200V 96A TMAX | Tube | T-MAX™ [B2] | Through Hole | POWER MOS 7® | -55°C ~ 150°C (TJ) |
APT35GP120B2DQ2G $16.54 | Microchip Technology | IGBT PT 1200V 96A | Tube | - | Through Hole | POWER MOS 7® | -55°C ~ 150°C (TJ) |
| Microchip Technology | IGBT PT MOS 7 COMBI 1200 V 35 A | Tube | - | - | - | - | |
 APT35GP120BG $13.35 | Microchip Technology | IGBT PT 1200V 96A TO247 | Tube | TO-247 [B] | Through Hole | POWER MOS 7® | -55°C ~ 150°C (TJ) |
| Microchip Technology | IGBT PT 600V 65A TO247 | Tube | TO-247 [B] | Through Hole | POWER MOS 8™ | -55°C ~ 150°C (TJ) | |
| Microchip Technology | IGBT PT 600V 65A TO247 | Tube | TO-247 [B] | Through Hole | POWER MOS 8™ | -55°C ~ 150°C (TJ) | |
| Microchip Technology | IGBT PT 600V 65A D3PAK | Tube | D3PAK | Surface Mount | POWER MOS 8® | -55°C ~ 150°C (TJ) |
