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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Microsemi CorporationIGBT PT 600V 100A T-MAXTubeT-MAX™Through Hole--55°C ~ 150°C (TJ)
Microchip TechnologyIGBT PT 600V 100A TO247TubeTO-247 [B]Through HolePOWER MOS 7®-55°C ~ 150°C (TJ)
Microchip TechnologyIGBT PT 600V 100A TO247TubeTO-247 [B]Through HolePOWER MOS 7®-55°C ~ 150°C (TJ)
Microsemi CorporationIGBT PT 600V 100A TO-264TubeTO-264Through Hole--55°C ~ 150°C (TJ)
Microchip TechnologyIGBT NPT 600V 54A TO247TubeTO-247 [B]Through HoleThunderbolt IGBT®-55°C ~ 150°C (TJ)
Microchip TechnologyIGBT NPT 600V 64A TO247TubeTO-247 [B]Through HoleThunderbolt IGBT®-55°C ~ 150°C (TJ)
Microchip TechnologyIGBT NPT 600V 64A TO247TubeTO-247 [B]Through HoleThunderbolt IGBT®-55°C ~ 150°C (TJ)
Microsemi CorporationIGBT NPT 600V 64A TO220TubeTO-220 [K]Through HoleThunderbolt IGBT®-55°C ~ 150°C (TJ)
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