Product categories

Filter by price :
Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

Screen Default Ranking Price By Date
Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Microchip TechnologyIGBT PT 1200V 69A TO247TubeTO-247 [B]Through HolePOWER MOS 7®-55°C ~ 150°C (TJ)
Microchip TechnologyIGBT PT 1200V 69A TO247TubeTO-247 [B]Through HolePOWER MOS 7®-55°C ~ 150°C (TJ)
Microchip TechnologyIGBT PT MOS 7 SIC COMBI 1200 V 2TubeTO-247-3Through HolePower MOS 7™-55°C ~ 150°C (TJ)
Microchip TechnologyIGBT PT 900V 72A TO247TubeTO-247 [B]Through HolePOWER MOS 7®-55°C ~ 150°C (TJ)
Microchip TechnologyIGBT PT 900V 72A TO247TubeTO-247 [B]Through HolePOWER MOS 7®-55°C ~ 150°C (TJ)
Microchip TechnologyIGBT NPT 1200V 75A TO-247BulkTO-247Through Hole--55°C ~ 150°C (TJ)
Microchip TechnologyIGBT NPT 1200V 75A TO-247TubeTO-247Through Hole--55°C ~ 150°C (TJ)
Microsemi CorporationIGBT NPT 1200V 75A TO-247TubeTO-247Through Hole--55°C ~ 150°C (TJ)
Add ComparisonUp to 4 can be added