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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() APT25GP120BDQ1G $9.85 | Microchip Technology | IGBT PT 1200V 69A TO247 | Tube | TO-247 [B] | Through Hole | POWER MOS 7® | -55°C ~ 150°C (TJ) |
![]() APT25GP120BG $9.08 | Microchip Technology | IGBT PT 1200V 69A TO247 | Tube | TO-247 [B] | Through Hole | POWER MOS 7® | -55°C ~ 150°C (TJ) |
![]() APT25GP120BSC15 $10.83 | Microchip Technology | IGBT PT MOS 7 SIC COMBI 1200 V 2 | Tube | TO-247-3 | Through Hole | Power MOS 7™ | -55°C ~ 150°C (TJ) |
![]() APT25GP90BDQ1G $7.96 | Microchip Technology | IGBT PT 900V 72A TO247 | Tube | TO-247 [B] | Through Hole | POWER MOS 7® | -55°C ~ 150°C (TJ) |
![]() APT25GP90BG $7.55 | Microchip Technology | IGBT PT 900V 72A TO247 | Tube | TO-247 [B] | Through Hole | POWER MOS 7® | -55°C ~ 150°C (TJ) |
| Microchip Technology | IGBT NPT 1200V 75A TO-247 | Bulk | TO-247 | Through Hole | - | -55°C ~ 150°C (TJ) | |
![]() APT25GR120BD15 $5.91 | Microchip Technology | IGBT NPT 1200V 75A TO-247 | Tube | TO-247 | Through Hole | - | -55°C ~ 150°C (TJ) |
| Microsemi Corporation | IGBT NPT 1200V 75A TO-247 | Tube | TO-247 | Through Hole | - | -55°C ~ 150°C (TJ) |