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Single IGBTs
Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
Screen Default Ranking Price By Date
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
| Microsemi Corporation | IGBT PT 600V 56A TO-247 | Tube | TO-247 | Through Hole | - | -55°C ~ 150°C (TJ) | |
 APT15GP60BDQ1G $4.59 | Microchip Technology | IGBT PT 600V 56A TO247 | Tube | TO-247 [B] | Through Hole | POWER MOS 7® | -55°C ~ 150°C (TJ) |
APT15GP60BG $3.26 | Microchip Technology | IGBT PT 600V 56A TO247 | Tube | TO-247 [B] | Through Hole | POWER MOS 7® | -55°C ~ 150°C (TJ) |
| Microsemi Corporation | IGBT PT 600V 56A TO220 | Tube | TO-220 [K] | Through Hole | POWER MOS 7® | -55°C ~ 150°C (TJ) | |
APT15GP90BDQ1G $5.15 | Microchip Technology | IGBT PT 900V 43A TO247 | Tube | TO-247 [B] | Through Hole | POWER MOS 7® | -55°C ~ 150°C (TJ) |
| Microsemi Corporation | IGBT PT 900V 43A TO247 | Tube | TO-247 [B] | Through Hole | POWER MOS 7® | - | |
APT15GT120BRDQ1G $3.76 | Microchip Technology | IGBT NPT 1200V 36A TO247 | Tube | TO-247 [B] | Through Hole | Thunderbolt IGBT® | -55°C ~ 150°C (TJ) |
| Microchip Technology | IGBT NPT 1200V 36A TO247 | Tube | TO-247 [B] | Through Hole | Thunderbolt IGBT® | -55°C ~ 150°C (TJ) |
