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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Alpha & Omega Semiconductor Inc.IGBT 650V 80A TO-220TubeTO-220Through HoleAlpha IGBT™-55°C ~ 175°C (TJ)
Microchip TechnologyIGBT TRENCH FIELD STP 1200V 245ATube-Through Hole--55°C ~ 150°C (TJ)
Microchip TechnologyIGBT TRENCH FIELD STOP 600V 229ATube-Through Hole--55°C ~ 175°C (TJ)
Microchip TechnologyIGBT TRENCH FS 600V 229A TO264TubeTO-264 [L]Through Hole--55°C ~ 175°C (TJ)
Microchip TechnologyIGBT NPT 600V 148ATube-Through HoleThunderbolt IGBT®-55°C ~ 150°C (TJ)
Microchip TechnologyIGBT 600V 183A 780W TO247Tube-Through HolePOWER MOS 8™-55°C ~ 150°C (TJ)
Microchip TechnologyIGBT PT 600V 183A TO264TubeTO-264 [L]Through Hole--55°C ~ 150°C (TJ)
Microsemi CorporationIGBT NPT 1200V 25A TO247TubeTO-247 [B]Through Hole--55°C ~ 150°C (TJ)
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