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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Microchip TechnologyIGBT NPT 600V 42A TO247TubeTO-247 [B]Through HoleThunderbolt IGBT®-55°C ~ 150°C (TJ)
Microchip TechnologyIGBT NPT 600V 42A TO247TubeTO-247 [B]Through HoleThunderbolt IGBT®-55°C ~ 150°C (TJ)
Microsemi CorporationIGBT NPT 600V 42A TO220TubeTO-220 [K]Through HoleThunderbolt IGBT®-55°C ~ 150°C (TJ)
Microchip TechnologyIGBT TRENCH FIELD STOP 600V 283ATube-Through Hole--55°C ~ 175°C (TJ)
Microchip TechnologyIGBT NPT 1200V 32A TO-247-3TubeTO-247-3Through Hole--55°C ~ 150°C (TJ)
Microsemi CorporationIGBT NPT 1200V 32A TO247TubeTO-247 [B]Through Hole--55°C ~ 150°C (TJ)
Microchip TechnologyIGBT TRENCH FS 600V 40A TO247TubeTO-247 [B]Through Hole--55°C ~ 175°C (TJ)
Microchip TechnologyIGBT TRENCH FS 600V 40A TO-247-3TubeTO-247-3Through Hole--55°C ~ 175°C (TJ)
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