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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Microchip TechnologyIGBT TRENCH FS 600V 40A TO247TubeTO-247 [B]Through Hole--55°C ~ 175°C (TJ)
Microchip TechnologyIGBT TRENCH FS 600V 40A D3PAKTubeD3PAKSurface Mount--55°C ~ 175°C (TJ)
Microchip TechnologyIGBT NPT 600V 43A TO247TubeTO-247 [B]Through HoleThunderbolt IGBT®-55°C ~ 150°C (TJ)
Microchip TechnologyIGBT NPT 600V 43A TO247TubeTO-247 [B]Through HoleThunderbolt IGBT®-55°C ~ 150°C (TJ)
Microchip TechnologyIGBT NPT FIELD STOP 1200V 67ATube-Through Hole--55°C ~ 150°C (TJ)
Microchip TechnologyIGBT TRENCH FS 1200V 67A TO247TubeTO-247 [B]Through Hole--55°C ~ 150°C (TJ)
Microchip TechnologyIGBT TRENCH FS 1200V 67A D3PAKTubeD3PAKSurface Mount--55°C ~ 150°C (TJ)
Microchip TechnologyIGBT TRENCH FS 1200V 67A D3PAKTape & Reel (TR),Cut Tape (CT)D3PAKSurface Mount--55°C ~ 150°C (TJ)
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