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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Microsemi CorporationIGBT NPT 1200V 25A TO220TubeTO-220 [K]Through Hole--55°C ~ 150°C (TJ)
Microsemi CorporationIGBT PT 600V 41A TO-247-3TubeTO-247-3Through HolePOWER MOS 7®-55°C ~ 150°C (TJ)
Microchip TechnologyIGBT PT 1200V 41A TO247TubeTO-247 [B]Through HolePOWER MOS 7®-55°C ~ 150°C (TJ)
Microchip TechnologyIGBT PT 1200V 41A TO247TubeTO-247 [B]Through HolePOWER MOS 7®-55°C ~ 150°C (TJ)
Microsemi CorporationIGBT PT 1200V 41A TO220TubeTO-220 [K]Through HolePOWER MOS 7®-55°C ~ 150°C (TJ)
Microchip TechnologyIGBT TRENCH FIELD STOP 600V 220ATube-Through Hole--55°C ~ 175°C (TJ)
Microchip TechnologyIGBT TRENCH FS 600V 220A TO264TubeTO-264 [L]Through Hole--55°C ~ 175°C (TJ)
Microchip TechnologyIGBT TRENCH FS 1200V 45A TO247TubeTO-247 [B]Through Hole--55°C ~ 150°C (TJ)
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