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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Microchip TechnologyIGBT NPT 1200V 64ATube-Through Hole--55°C ~ 150°C (TJ)
Microchip TechnologyIGBT NPT 1200V 52A TO247TubeTO-247 [B]Through Hole--55°C ~ 150°C (TJ)
Microchip TechnologyIGBT NPT 1200V 64A TO264TubeTO-264 [L]Through Hole--55°C ~ 150°C (TJ)
Microchip TechnologyIGBT PT 900V 63A TO247TubeTO-247 [B]Through HolePOWER MOS 8™-55°C ~ 150°C (TJ)
Microchip TechnologyIGBT PT 900V 63A TO247TubeTO-247 [B]Through Hole--55°C ~ 150°C (TJ)
Microchip TechnologyIGBT NPT FS 1200V 94A TO247TubeTO-247 [B]Through Hole--55°C ~ 150°C (TJ)
Microchip TechnologyIGBT NPT FIELD STOP 1200V 94ATube-Through Hole--55°C ~ 150°C (TJ)
Microchip TechnologyIGBT NPT FS 1200V 94A D3PAKTubeD3PAKSurface Mount--55°C ~ 150°C (TJ)
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