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Single IGBTs
Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
Screen Default Ranking Price By Date
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
 APT45GP120B2DQ2G $17.48 | Microchip Technology | IGBT PT 1200V 113A | Tube | - | Through Hole | POWER MOS 7® | -55°C ~ 150°C (TJ) |
 APT45GP120BG $15.23 | Microchip Technology | IGBT PT 1200V 100A TO247 | Tube | TO-247 [B] | Through Hole | POWER MOS 7® | -55°C ~ 150°C (TJ) |
APT45GR65B $3.30 | Microchip Technology | IGBT NPT 650V 92A TO-247 | Tube | TO-247 | Through Hole | - | - |
| Microsemi Corporation | IGBT NPT 650V 118A TO-247 | Bulk | TO-247 | Through Hole | - | -55°C ~ 150°C (TJ) | |
| Microsemi Corporation | IGBT NPT 650V 118A D3PAK | Bulk | D3PAK | Surface Mount | - | -55°C ~ 150°C (TJ) | |
| Microchip Technology | IGBT PT MOS 8 COMBI 900 V 46 A S | Tube | - | - | - | - | |
APT50GF120B2RG $18.08 | Microchip Technology | IGBT NPT 1200V 135A | Tube | - | Through Hole | - | -55°C ~ 150°C (TJ) |
 APT50GF120LRG $18.45 | Microchip Technology | IGBT NPT 1200V 135A TO264 | Tube | TO-264 [L] | Through Hole | - | -55°C ~ 150°C (TJ) |
