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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() BUK9Y8R7-60E,115 $1.11 | Nexperia USA Inc. | MOSFET N-CH 60V 86A LFPAK56 | Tape & Reel (TR),Cut Tape (CT) | LFPAK56, Power-SO8 | Surface Mount | TrenchMOS™ | -55°C ~ 175°C (TJ) |
![]() BUK9Y8R8-60ELX $2.37 | Nexperia USA Inc. | SINGLE N-CHANNEL 60 V, 5.6 MOHM | Tape & Reel (TR),Cut Tape (CT) | LFPAK56, Power-SO8 | Surface Mount | - | -55°C ~ 175°C (TJ) |
![]() BUZ10 $0.51 | STMicroelectronics | MOSFET N-CH 50V 23A TO220AB | Tube | TO-220 | Through Hole | STripFET™ | 175°C (TJ) |
![]() BUZ100S $0.57 | Infineon Technologies | N-CHANNEL POWER MOSFET | Bulk | PG-TO220-3-1 | Through Hole | SIPMOS® | -55°C ~ 175°C (TJ) |
![]() BUZ100S-E3045A $0.57 | Infineon Technologies | N-CHANNEL POWER MOSFET | Bulk | - | - | - | - |
![]() BUZ101L $0.30 | Infineon Technologies | N-CHANNEL POWER MOSFET | Bulk | - | - | - | - |
![]() BUZ11-NR4941 $1.32 | onsemi | MOSFET N-CH 50V 30A TO220-3 | Tube | TO-220-3 | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() BUZ111S $0.88 | Infineon Technologies | N-CHANNEL POWER MOSFET | Bulk | PG-TO220-3-1 | Through Hole | SIPMOS® | -55°C ~ 175°C (TJ) |

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